Low-cost process for p-n junction type solar cell. Final report, September 1, 1980-February 28, 1981

Technical Report · Sun Feb 01 04:00:00 EST 1981

DOI:https://doi.org/10.2172/6317476· OSTI ID:6317476

Mooney, J. B.; Lamoreaux, R. H.; Bates, Jr., C. W.

Low-cost manufacturing methods have been studied for two types of thin-film solar cells on glass substrates. One is a heterojunction CdS/CuInSe/sub 2/ deposited by chemical spray pyrolysis; the other is a CdS/CdTe cell that is prepared by silk screening and sintering. In the spray pyrolysis program, we have succeeded in deposition CdS layers that, after a brief heat treatment in N-Cd atmosphere, have a resistivity of less than 0.1 ..cap omega..-cm. We have also spray-deposited CuInSe/sub 2/ films that after a brief heat-treatment exhibit the desired chalcopyrite structure. Heterojunctions with photovoltaic response were produced by spray pyrolysis. The fill factors were low; consequently, the efficiency was less than 1%. The conditions for heat-treatment of the two layers of the heterojunction are mutually incompatible, and the resistance of the CdS layer increases during the CuInSe/sub 2/ deposition. Also, the condition for the conversion of the sphalerite to chalcopyrite seems to destroy the junction. A chemical thermodynamic study of the spray pyrolysis process has been useful in understanding and directing the spray pyrolysis program. The sintered cells are prepared by first applying a CdS layer containing a CdCl/sub 2/ flux and GaCl/sub 2/ dopant to a borosilicate glass substrate. The layer is sintered in a N-Cd atmosphere, then a CdTe layer (also containing CdCl/sub 2/ flux) is applied and sintered in nitrogen. The CdTe is converted to p-type by immersion in a CuCl solution. Metallic paint electrodes are then applied. We have obtained photovoltaic response with V/sub oc/ ranging up to 0.6 V, but with low I/sub sc/ and fill factor, and consequent low efficiency. The major problems appear to be in CdS film density and in junction deliniation.

• Research Organization: Solar Energy Research Inst., Golden, CO (USA); SRI International, Menlo Park, CA (USA); Stanford Univ., CA (USA)
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6317476
• Report Number(s): SERI/TR-8104-4-T3; ON: DE81026049
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CADMIUM CHLORIDES
CADMIUM COMPOUNDS
CADMIUM HALIDES
CADMIUM SULFIDE SOLAR CELLS
CADMIUM SULFIDES
CADMIUM TELLURIDES
CHALCOGENIDES
CHALCOPYRITE
CHLORIDES
CHLORINE COMPOUNDS
COPPER COMPOUNDS
COPPER SELENIDES
COPPER SULFIDES
CRYSTAL DOPING
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIPMENT
FABRICATION
FILL FACTORS
GALLIUM CHLORIDES
GALLIUM COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM SELENIDES
INORGANIC PHOSPHORS
IRON COMPOUNDS
IRON SULFIDES
JUNCTIONS
MATERIALS
MINERALS
P-TYPE CONDUCTORS
PHOSPHORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SCREEN PRINTING
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SINTERING
SOLAR CELLS
SOLAR EQUIPMENT
SPRAY COATING
SULFIDES
SULFUR COMPOUNDS
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
THERMODYNAMICS
TRANSITION ELEMENT COMPOUNDS