Photopumped low threshold Al/sub x/''Ga/sub 1//sub -x/''As -Al/sub x/'Ga/sub 1//sub -x/'As-Al/sub x/Ga/sub 1//sub -x/As (x''approx. 0. 85, x'approx. 0. 3, x = 0) single quantum well lasers

Journal Article · Sun May 01 00:00:00 EDT 1983 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94091· OSTI ID:6310469

Camras, M D; Holonyak, N Jr; Nixon, M A; Burnham, R D; Streifer, W; Scifres, D R; Paoli, T L; Lindstroem, C

Data are presented showing that it is possible to photopump and operate a quantum well heterostructure laser at equivalent current densities (J/sub eq/) as low as 70 A/cm/sup 2/. Continuous 300-K laser operation of a single 60-A GaAs (x = 0) quantum well in the center of a approx.0.12-..mu..m-thick x'approx.0.30 Al/sub x/'Ga/sub 1-x/'As waveguide (and carrier reservoir), which is confined by x''approx.0.85 Al/sub x/''Ga/sub 1-x/''As layers, is demonstrated at I/sub eq/approx.0.4 mA (168 W/cm/sup 2/, J/sub eq/approx.70 A/cm/sup 2/). These quantum well heterostructures are grown by organometallic vapor phase epitaxy.

• Research Organization: Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 6310469
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 42:9
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
OPTICAL PROPERTIES
ALUMINIUM ARSENIDES
CONFINEMENT
CURRENT DENSITY
EPITAXY
EXPERIMENTAL DATA
GALLIUM ARSENIDES
HETEROJUNCTIONS
ORGANOMETALLIC COMPOUNDS
VAPORS
WAVEGUIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DATA
FLUIDS
GALLIUM COMPOUNDS
GASES
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)