Limiting factors for the application of crystalline upgraded metallurgical grade silicon

Journal Article · Tue May 01 04:00:00 EDT 1984 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1984.21576· OSTI ID:6295700

Schlosser, V

Differently processed upgraded metallurgical grade silicon (UMG-Si) has been used to produce planar diffused solar cells. The results obtained from these cells were used to evaluate the limiting factors governing the conversion efficiency in UMG-Si-cells. The present state of practical cell processing was taken into account for the discussion of the potential of new technologies. For conventionally processed cells on UMG-Si having a planar junction, it appears that a conversion efficiency of about 13 percent under AM1.5 conditions (incident light intensity = 1 kWm/sup -2/, T = 27/sup 0/C) cannot be exceeded. Experimentally a conversion efficiency of 10.5 percent was obtained.

• Research Organization: Ludwig Boltzmann Institut fur Festkorperphysik, Wien
• OSTI ID: 6295700
• Journal Information: IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-31:5; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CONVERSION
DIRECT ENERGY CONVERSION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
ENERGY CONVERSION
EQUIPMENT
LIMITING VALUES
MEDIUM TEMPERATURE
PHOTOELECTRIC CELLS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC CELLS
PHOTOVOLTAIC CONVERSION
PHOTOVOLTAIC EFFECT
QUANTUM EFFICIENCY
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT