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Metal oxides deposited using ion assisted deposition at low temperature

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.575929· OSTI ID:6295057
We have investigated the use of ion assisted deposition (IAD) to deposit thin films of Al/sub 2/O/sub 3/, Ta/sub 2/O/sub 5/, and TiO/sub 2/ at a low substrate temperature (T/sub sub/approx. =100 /sup 0/C). Refractive indices of films deposited using IAD initially increase for a corresponding increase in ion current density until the current density reaches a so-called ''critical value.'' Films deposited at bombardment levels greater than the critical value exhibit refractive indices that are less than those obtained at current densities below the critical value. The critical value is reduced by an increase in ion energy. We have compared the effects of using IAD at low temperature to our previous results from depositing thin films using IAD at an elevated substrate temperature (T/sub sub/approx. =300 /sup 0/C). This comparison shows that reducing the substrate temperature increases the critical value. The effects of IAD on optical scatter were also investigated. IAD increases the optical scatter characteristics of TiO/sub 2/ thin films. Raman spectroscopy was used to correlate optical scatter in TiO/sub 2/ thin films to the presence of anatase crystallites in the coatings.
Research Organization:
University of New Mexico, Department of Electrical and Computer Engineering, Center for High Technology Materials, Albuquerque, New Mexico 87131
OSTI ID:
6295057
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:3; ISSN JVTAD
Country of Publication:
United States
Language:
English