Dynamics of Q-switched laser annealing

Journal Article · Fri Jun 01 04:00:00 EDT 1979 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.90670· OSTI ID:6293129

Auston, D H; Golovchenko, J A; Simons, A L; Surko, C M; Venkatesan, T N.C.

Using time-resolved optical-reflectivity measurements, the duration of the thin liquid layer accompanying Q-switched laser annealing in Si, Ge, and GaAs has been determined. The duration of this melted layer has been studied as a function of laser energy at 1.06- and 0.53-..mu..m wavelength for both implanted and unimplanted samples. Thresholds for initiation of melting and damaging the surface are obtained directly. With the aid of channeling--Rutherford-backscattering measurements, the duration of melt necessary for annealing implanted samples is determined. Results for unimplanted silicon at 530 nm are compared with recent numerical calculations. In addition, measuremnts of the fall time of the reflectivity as the liquid-solid interface approaches the surface enables us to estimate regrowth velocities. A simple scheme is also discussed for efficient annealing with dual wavelengths.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6293129
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 34:11; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BACKSCATTERING
CHANNELING
ELASTIC SCATTERING
ELEMENTS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
HEAT TREATMENTS
LASERS
LAYERS
LIQUIDS
MELTING
METALS
OPTICAL PROPERTIES
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
Q-SWITCHING
REFLECTIVITY
RUTHERFORD SCATTERING
SCATTERING
SEMIMETALS
SILICON
SURFACE PROPERTIES
TIME DEPENDENCE
WAVELENGTHS