Dual wavelength laser thermal processing of semiconductors

Technical Report · Mon Jun 30 04:00:00 EDT 1980

OSTI ID:6487689

Cohen, M G; Liu, K; Kaplan, R A

By employing a dual wavelength laser source and tailoring the time delay between pulses at the two wavelengths to take advantage of the strong temperature dependence of the absorption coefficient for the initially less-strongly absorbed wavelength, the annealing of ion-implantation damage in semiconductors by laser irradiation may be optimized. A solid-state laser emitting high-intensity pulses at 0.53 micrometers and 1.06 micrometers was used in this study in conjunction with an optical fiber delay line to examine the annealing characteristics of an As-implanted silicon solar cell wafer. By varying the length of fiber and thereby varying the delay between pulses of the two wavelengths, it was determined that at 25 nsec delay, the sample surface is preheated by the 0.53 micrometers radiation to provide optimal coupling for the following 1.06 micrometers radiation. These results are in agreement with a theoretical model based on melting and liquid phase epitaxial regrowth. Caculations based on this model are presented.

• Research Organization: Quantronix Corp., Smithtown, NY (USA)
• OSTI ID: 6487689
• Report Number(s): PB-81-114639
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
DAMAGE
DIRECT ENERGY CONVERTERS
EQUIPMENT
HEAT TREATMENTS
ION IMPLANTATION
IRRADIATION
LASERS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT