Bandgap renormalization: GaAs/AlGaAs quantum wells
Conference
·
OSTI ID:629305
- Sandia National Labs., Albuquerque, NM (United States)
- Los Alamos National Lab., NM (United States)
- Florida State Univ., Tallahassee, FL (United States). National High Magnetic Field Lab.
Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4K and for magnetic fields up to 30T. The 2D- carrier densities varied between 1 and 12 x 10(11) cm(-2). At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 629305
- Report Number(s):
- SAND--97-1980C; CONF-980117--; ON: DE98002592
- Country of Publication:
- United States
- Language:
- English
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