Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells
Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4K. The 2D-carrier densities varied between 1 and 12 {times} 10{sup 11}/sq cm. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 642739
- Report Number(s):
- SAND--97-1083C; CONF-970947--; ON: DE98000225
- Country of Publication:
- United States
- Language:
- English
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