High-efficiency ion-implanted silicon solar cells

Journal Article · Tue May 01 04:00:00 EDT 1984 · IEEE Trans. Electron Devices; (United States)

DOI:https://doi.org/10.1109/T-ED.1984.21567· OSTI ID:6284640

Spitzer, M B; Tobin, S P

The development of solar cells with AM1 coversion efficiency of 18 percent is reported. The cells comprise an n/sup +/-p-p/sup +/ structure fabricated from float zone silicon having resistivity of 0.3 ..cap omega.. cm. The n/sup +/ and p/sup +/ regions are formed by low energy ion implantation and thermal annealing. An important feature of cell fabrication is the growth of SiO/sub 2/ passivation for reduction of surface recombination velocity. Details of both cell fabrication and testing are reported.

• Research Organization: Spire Corporation, Bedford, MA
• OSTI ID: 6284640
• Journal Information: IEEE Trans. Electron Devices; (United States), Journal Name: IEEE Trans. Electron Devices; (United States) Vol. ED-31:5; ISSN IETDA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ANNEALING
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FABRICATION
HEAT TREATMENTS
ION IMPLANTATION
OXIDES
OXYGEN COMPOUNDS
PASSIVATION
PERFORMANCE TESTING
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
TESTING