Pressure dependence of the nonradiative lifetime in GaAs/AlGaAs double-heterostructure lasers

Journal Article · Thu Oct 15 04:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339313· OSTI ID:6284628

Heasman, K C; Blood, P; Adams, A R; Fletcher, E D

We have measured the linear losses in a GaAs/AlGaAs double-heterostructure laser as a function of applied hydrostatic pressure. The nonradiative lifetime increases by a factor 2.5 from zero to 7.6 kbar, and if this is due to recombination via a deep state, then the rate-limiting capture cross section decreases with pressure, suggesting capture by multiphonon emission. We find that it is necessary to postulate the existence of other nonlinear losses at threshold to account for the increase in threshold current with pressure measured on the same structure. Carrier transfer to higher conduction-band minima in the active or cladding regions are suggested as possible mechanisms.

• Research Organization: Department of Physics, University of Surrey, Guildford, Surrey, United Kingdom
• OSTI ID: 6284628
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 62:8; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
CURRENTS
DATA
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
LIFETIME
NUMERICAL DATA
OPERATION
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SPECTROSCOPY
THRESHOLD CURRENT