skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.2967877· OSTI ID:21124061
; ; ;  [1];  [2]; ; ; ;  [3]; ;  [4]
  1. Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011 (United States)
  2. Department of Physics, Miami University, Oxford, Ohio 45056 (United States)
  3. Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200 (Australia)
  4. School of Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072 (Australia)

CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAs/AlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of {approx}1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.

OSTI ID:
21124061
Journal Information:
Applied Physics Letters, Vol. 93, Issue 5; Other Information: DOI: 10.1063/1.2967877; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English