Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures

Journal Article · Mon Aug 04 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2967877· OSTI ID:21124061

Perera, S; Fickenscher, M A; Jackson, H E; Smith, L M ^[1]; Yarrison-Rice, J M ^[2]; Joyce, H J; Gao, Q; Tan, H H; Jagadish, C ^[3]; Zhang, X; Zou, J ^[4]

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1. Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011 (United States)
2. Department of Physics, Miami University, Oxford, Ohio 45056 (United States)
3. Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200 (Australia)
4. School of Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072 (Australia)

CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAs/AlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of {approx}1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.

• OSTI ID: 21124061
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 93; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CARRIER DENSITY
EXCITATION
EXCITONS
GALLIUM ARSENIDES
LAYERS
LIFETIME
MANY-BODY PROBLEM
OXIDATION
OXYGEN
PHOTOLUMINESCENCE
QUANTUM WIRES
RECOMBINATION
SEMICONDUCTOR LASERS
TIME RESOLUTION
TWO-DIMENSIONAL CALCULATIONS