Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
- Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011 (United States)
- Department of Physics, Miami University, Oxford, Ohio 45056 (United States)
- Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra ACT 0200 (Australia)
- School of Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072 (Australia)
CW and time-resolved photoluminescence measurements are used to investigate exciton recombination dynamics in GaAs/AlGaAs heterostructure nanowires grown with a recently developed technique which minimizes twinning. A thin capping layer is deposited to eliminate the possibility of oxidation of the AlGaAs shell as a source of oxygen defects in the GaAs core. We observe exciton lifetimes of {approx}1 ns, comparable to high quality two-dimensional double heterostructures. These GaAs nanowires allow one to observe state filling and many-body effects resulting from the increased carrier densities accessible with pulsed laser excitation.
- OSTI ID:
- 21124061
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 5; Other Information: DOI: 10.1063/1.2967877; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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