Grain boundary oxidation rate of semiconductive Mn-doped BaTiO{sub 3}

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:62839

Huybrechts, B; Takata, Masasuke; Ishizaki, Kozo ^[1]

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1. Nagaoka Univ. of Technology, Niigata (Japan)

The relationship between the Mn concentration, the grain boundary oxidation after sintering, and the positive temperature coefficient of resistivity-properties were examined. Semiconductive BaTiO{sub 3} was doped with 0.02 and 0.1 mol% Mn. The 0.1 mol% doped samples showed a bigger difference between the minimum and maximum resistivity. Surprisingly this was not caused by an increase in electron trap density (N{sub s}) at the grain boundaries, but by an increase in the energy difference between the conduction band and the electron traps, combined with a decrease in charge carrier density, N{sub d}. The oxidation rate did not increase with increasing Mn concentration, contrary to what was expected. This is explained by the fact that electron traps in the 0.02% doped samples are not caused by Mn but by intrinsic electron traps, such as barium vacancies and adsorbed oxygen.

• OSTI ID: 62839
• Report Number(s): CONF-940315--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
CARRIER DENSITY
DOPED MATERIALS
ELECTRONIC STRUCTURE
GRAIN BOUNDARIES
MANGANESE
METALLURGICAL EFFECTS
MICROSTRUCTURE
SCHOTTKY DEFECTS
SEMICONDUCTOR MATERIALS
SINTERING
TITANATES
TRAPS