Modification of semiconductive BaTiO{sub 3} film and its electrical properties

Journal Article · Tue Oct 01 04:00:00 EDT 1996 · Materials Research Bulletin

DOI:https://doi.org/10.1016/0025-5408(96)00110-9· OSTI ID:415484

Funakubo, Hiroshi; Hioki, Tsuyoshi; Sakurai, Osamu; Shinozaki, Kazuo; Mizutani, Nobuyasu ^[1]

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1. Tokyo Inst. of Tech. (Japan). Dept. of Inorganic Materials

Nonlinear V-I characteristics were observed in semiconductive BaTiO{sub 3} film heated at 550 C for 2 h in air. The temperature dependency of the resistivity appeared to be the minimum near 120 C for this heat treatment. It was estimated from the keeping time dependency of the resistivity that the oxidation in this film occurs first at the grain boundary between columnar grains and then goes to the inner of the grains. The structure made up of both the semiconductive grains and the oxidized interfaces with high resistivity was considered to generate these properties. Nonlinear V-I characteristics also appeared from diffusion of Bi element from the surface of the BaTiO{sub 3} film. These results show the possibility of the generation of new properties by the modification of grain boundaries between columnar grains of semiconductive BaTiO{sub 3} film, which is comparable to that of the sintered body of semiconductive BaTiO{sub 3}-based functional ceramic.

• OSTI ID: 415484
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 10 Vol. 31; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AIR
BARIUM OXIDES
BISMUTH ADDITIONS
CHEMICAL VAPOR DEPOSITION
DIFFUSION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GRAIN BOUNDARIES
HEAT TREATMENTS
MAGNESIUM OXIDES
OXYGEN ADDITIONS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TITANIUM OXIDES