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EPR evidence for activation of trap centers in PTCR BaTiO/sub 3/ ceramics

Journal Article · · Mater. Res. Bull.; (United States)
Donor-doped BaTiO/sub 3/ ceramics, exhibiting PTCR, showed an EPR signal with g=1.997 which acquires high intensity above T /SUB C/ . This is indicative of activation of the corresponding defect centers, possibly V' /SUB Ba./ . The intensity of g=1.997 varies with Ba/Ti ratio, rate of cooling from the sintering temperature and the addition of TiO/sub 2/ as sintering agent. The signal intensity decreases with increase in grain size and is weak in La-doped BaTiO/sub 3/ single crystals. Therefore the concentration of V /SUB Ba/ is more around the grain boundaries than that in the bulk of grains. Activated trap centers around T /SUB C/ also arises from background impurities; those with change of electronic state: M /SUP n+1/ +e' = M /SUP n+/ (eg:-Mn) and those associated with oxygen vacancies: M /SUP p+/ -V /SUB O/ (e') (eg:-Fe/sup 3 +/). Activation of these trap centers are not dependent on the disappearance of spontaneous polarization but to the structural changes during phase transformation. The trapped charge carriers are not available for conduction and hence the increase in electrical resistivity.
Research Organization:
Materials Research Laboratory, Indian Institute of Science, Bangalore
OSTI ID:
5036692
Journal Information:
Mater. Res. Bull.; (United States), Journal Name: Mater. Res. Bull.; (United States) Vol. 20:5; ISSN MRBUA
Country of Publication:
United States
Language:
English