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Title: Ion irradiation of metal-semiconductor interfaces, and applications to electrical contacts

Abstract

In the initial stages of this work the phase transformations in a number of ion implanted silicides were investigated. The results were interpreted as possible evidence for the existence of crystalline nuclei in the implanted silicide layer, even after high ion doses. In a study on the effect of ion mixing on multilayer samples with various layer thicknesses, it was found that for samples with an overall composition in a two phase region of the Ni-Si phase diagram equilibrium phases were always the first to form. At higher doses an amorphous phase was also present, but even at the very highest doses a crystalline equilibrium phase was observed, as expected from the initial study. Metal-silicon interactions in ion mixing may differ with those of the corresponding thermally annealed cases. Evidence is presented here that while the moving species under ion mixing appears to be strongly influenced by the implantation damage (defect) distribution in the sample, further experimentation indicated that the relative ranges of the secondary recoils may explain this observation. The final chapters of the dissertation consider the application of ion beam mixing to improving the electrical properties of devices. Ion mixing was found to decrease the interfacial roughness inmore » PtSi/Si Schottky barrier diodes, while at the same time decreasing the reverse current and improving the uniformity in electrical characteristics from device to device. Irradiation was used to promote the formation of a SiC layer at a Si/diamond interface, leading to a Si/SiC/diamond graded bandgap structure. The contact resistance of such contacts was found to be comparable to the best ohmic contacts formed with Ta/Au, but with considerably less deviation.« less

Authors:
Publication Date:
Research Org.:
California Univ., San Diego, CA (USA)
OSTI Identifier:
6280918
Resource Type:
Miscellaneous
Resource Relation:
Other Information: Thesis (Ph. D.)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DIAMONDS; PHYSICAL RADIATION EFFECTS; NICKEL SILICIDES; PLATINUM SILICIDES; AMORPHOUS STATE; ANNEALING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC CONTACTS; ELECTRICAL PROPERTIES; GOLD; INTERFACES; ION BEAMS; ION IMPLANTATION; IRRADIATION; METALS; NICKEL; OPTIMIZATION; PHASE DIAGRAMS; PHASE TRANSFORMATIONS; PLATINUM; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICIDES; SILICON CARBIDES; TANTALUM; BEAMS; CARBIDES; CARBON; CARBON COMPOUNDS; DIAGRAMS; ELECTRICAL EQUIPMENT; ELEMENTAL MINERALS; ELEMENTS; EQUIPMENT; HEAT TREATMENTS; JUNCTIONS; MATERIALS; MINERALS; NICKEL COMPOUNDS; NONMETALS; PHYSICAL PROPERTIES; PLATINUM COMPOUNDS; PLATINUM METALS; RADIATION EFFECTS; SEMICONDUCTOR DIODES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; 360206* - Ceramics, Cermets, & Refractories- Radiation Effects; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies; 360204 - Ceramics, Cermets, & Refractories- Physical Properties; 360605 - Materials- Radiation Effects; 360602 - Other Materials- Structure & Phase Studies; 360603 - Materials- Properties

Citation Formats

Hewett, Jr, C A. Ion irradiation of metal-semiconductor interfaces, and applications to electrical contacts. United States: N. p., 1989. Web.
Hewett, Jr, C A. Ion irradiation of metal-semiconductor interfaces, and applications to electrical contacts. United States.
Hewett, Jr, C A. Sun . "Ion irradiation of metal-semiconductor interfaces, and applications to electrical contacts". United States.
@article{osti_6280918,
title = {Ion irradiation of metal-semiconductor interfaces, and applications to electrical contacts},
author = {Hewett, Jr, C A},
abstractNote = {In the initial stages of this work the phase transformations in a number of ion implanted silicides were investigated. The results were interpreted as possible evidence for the existence of crystalline nuclei in the implanted silicide layer, even after high ion doses. In a study on the effect of ion mixing on multilayer samples with various layer thicknesses, it was found that for samples with an overall composition in a two phase region of the Ni-Si phase diagram equilibrium phases were always the first to form. At higher doses an amorphous phase was also present, but even at the very highest doses a crystalline equilibrium phase was observed, as expected from the initial study. Metal-silicon interactions in ion mixing may differ with those of the corresponding thermally annealed cases. Evidence is presented here that while the moving species under ion mixing appears to be strongly influenced by the implantation damage (defect) distribution in the sample, further experimentation indicated that the relative ranges of the secondary recoils may explain this observation. The final chapters of the dissertation consider the application of ion beam mixing to improving the electrical properties of devices. Ion mixing was found to decrease the interfacial roughness in PtSi/Si Schottky barrier diodes, while at the same time decreasing the reverse current and improving the uniformity in electrical characteristics from device to device. Irradiation was used to promote the formation of a SiC layer at a Si/diamond interface, leading to a Si/SiC/diamond graded bandgap structure. The contact resistance of such contacts was found to be comparable to the best ohmic contacts formed with Ta/Au, but with considerably less deviation.},
doi = {},
url = {https://www.osti.gov/biblio/6280918}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}

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