Direct observation of the core structures of threading dislocations in GaN
- Department of Physics, University of Illinois at Chicago, Chicago, Illinois60607-7059 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee37831-6031 (United States)
- Cavendish Laboratory, Cambridge University, CambridgeCB30HE (United Kingdom)
- CRHEA-CNRS, rue Bernard Gregory, 06560Valbonne (France)
Here we present the first direct observation of the atomic structure of threading dislocation cores in hexagonal GaN. Using atomic-resolution Z-contrast imaging, dislocations with edge character are found to exhibit an eight-fold ring core. The central column in the core of a pure edge dislocation has the same configuration as one row of dimers on the {l_brace}10-10{r_brace} surface. Following recent theoretical work, it is proposed that edge dislocations do not have deep defect states in the band gap, and do not contribute to cathodoluminescence dislocation contrast. On the other hand, both mixed and pure screw dislocations are found to have a full core, and full screw dislocation cores were calculated to have states in the gap. {copyright} {ital 1998 American Institute of Physics.}
- OSTI ID:
- 627950
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 72; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Structural and electronic properties of line defects in GaN
The atomic structure of extended defects in GaN
Direct observations of atomic structures of defects in GaN by high-resolution Z-contrast STEM
Conference
·
Sat Jul 01 00:00:00 EDT 2000
·
OSTI ID:20104583
The atomic structure of extended defects in GaN
Conference
·
Sat Jul 01 00:00:00 EDT 2000
·
OSTI ID:20104569
Direct observations of atomic structures of defects in GaN by high-resolution Z-contrast STEM
Technical Report
·
Sun Nov 30 23:00:00 EST 1997
·
OSTI ID:564252