The atomic structure of extended defects in GaN
Conference
·
OSTI ID:20104569
GaN layers contain large densities (10{sup 10} cm{sup {minus}2}) of threading dislocations, nanopipes, (0001) and {l_brace}11{bar 2}0{r_brace} stacking faults, and {l_brace}10{bar 1}0{r_brace} inversion domains. Three configurations have been found for pure edge dislocations, mainly inside high angle grain boundaries where the 4 atom ring cores can be stabilized. Two atomic configurations, related by a 1/6<10{bar 1}0>stair rod dislocation, have been observed for the {l_brace}11{bar 2}0{r_brace} stacking fault in (Ga-Al)N layers. For the {l_brace}10{bar 1}0{r_brace} inversion domain boundaries, a configuration corresponding to the Holt model was observed, as well as another with no N-N or Ga-Ga bonds.
- Research Organization:
- CNRS, Caen (FR)
- OSTI ID:
- 20104569
- Country of Publication:
- United States
- Language:
- English
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