Direct observations of atomic structures of defects in GaN by high-resolution Z-contrast STEM
- Univ. of Illinois, Chicago, IL (United States). Dept. of Physics
- Oak Ridge National Lab., TN (United States). Solid State Univ.
- Cambridge Univ. (United Kingdom). Cavendish Lab.
- CRHEA-CNRS, Valbonne (France)
GaN/(0001) Sapphire grown by low pressure MOVPE is studied by high resolution Z-contrast imaging using STEM. First direct observation of the threading dislocation with edge character shows the atomic core structure, which appears to have a similar configuration to the {l_brace}10-10{r_brace} surface. The surfaces of the nanopipe walls are on {l_brace}10-10{r_brace} with the terminating layer between the atoms with one bond per pair. In addition, the high resolution Z contrast image of the prismatic stacking fault confirms the results by conventional HRTEM.
- Research Organization:
- Oak Ridge National Lab., TN (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 564252
- Report Number(s):
- ORNL/CP--95879; CONF-971201--; ON: DE98001847; BR: KC0202040
- Country of Publication:
- United States
- Language:
- English
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