Amorphous boron-silicon-hydrogen alloys for thin-film heterojunction solar cells. Quarterly technical progress report No. 3, 1 December 1980-28 February 1981

Technical Report · Mon Jun 01 04:00:00 EDT 1981

OSTI ID:6278217

Moore, A R; Carlson, D E; Smith, R W

Amorphous boron-silicon-hydrogen (a-B:Si:H) alloys have been used to make heterojunction contacts to hydrogenated amorphous silicon (a-Si:H) films. The best conversion efficiency for these heterojunction devices is approx. 1.65% as compared to approx. 5.5% for a-Si:H p-i-n devices made in the same system with similar deposition conditions. The performance of a-B:Si:H/a-Si:H heterojunction cells appears to be limited mainly by a large density of interface states. Investigation is reported of another p-type, wide bandgap material, namely, microcrystalline silicon-carbon-hydrogen (m-Si:C:H). Three techniques are being explored to make m-Si:C:H films: glow-discharge deposition, thermal annealing of a-Si:C:H films, and laser annealing of a-Si:C:H: films. Preliminary results indicate that laser annealing is the most promising approach.

• Research Organization: Solar Energy Research Inst., Golden, CO (USA); RCA Labs., Princeton, NJ (USA)
• DOE Contract Number: AC02-77CH00178
• OSTI ID: 6278217
• Report Number(s): SERI/PR-0-9010-3; ON: DE81027254
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALLOYS
AMORPHOUS STATE
ANNEALING
BORON ALLOYS
CARBON ADDITIONS
DATA
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC DISCHARGES
ELECTRICAL PROPERTIES
ENERGY GAP
ENERGY-LEVEL DENSITY
EQUIPMENT
EXPERIMENTAL DATA
GLOW DISCHARGES
HEAT TREATMENTS
HETEROJUNCTIONS
HYDROGEN ADDITIONS
INFORMATION
JUNCTIONS
LASERS
MATERIALS
NUMERICAL DATA
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SILICON ALLOYS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT