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Gauging film thickness: A comparison of an x-ray diffraction technique with Rutherford backscattering spectrometry

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.334757· OSTI ID:6273191
; ;
An x-ray diffraction technique for determining thin-film thickness is presented which should prove to be a valuable alternative to the array of spectroscopies (Rutherford backscattering spectrometry, Auger electron spectroscopy, etc.) currently favored for these measurements. Some of the virtues of this x-ray diffraction approach are its nondestructive nature, fast data acquisition rate (enabling in situ observations), thickness resolution better than 5 nm, and conventional equipment requirements. Results are shown for Pd/sub 2/Si thin films grown during isothermal annealing of Pd coatings (100 nm) on Si at 200 /sup 0/C for various amounts of time. A comparison of these x-ray measurements with Rutherford backscattering spectrometry data taken from the same specimens is used to demonstrate the validity of the x-ray technique.
Research Organization:
Department of Metallurgy and Mining Engineering and the Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
OSTI ID:
6273191
Journal Information:
J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 57:2; ISSN JAPIA
Country of Publication:
United States
Language:
English

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Related Subjects

440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
ANNEALING
AUGER ELECTRON SPECTROSCOPY
BACKSCATTERING
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
DIMENSIONS
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
HEAT TREATMENTS
MATERIALS TESTING
MEASURING INSTRUMENTS
METALS
NONDESTRUCTIVE TESTING
PALLADIUM
PALLADIUM COMPOUNDS
PALLADIUM SILICIDES
PLATINUM METALS
RESOLUTION
SCATTERING
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SPECTROSCOPY
TESTING
THICKNESS
THICKNESS GAGES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
X-RAY DIFFRACTION