Material analysis using combined elastic recoil detection, high energy backscattering, and Rutherford backscattering spectrometry
- Idaho State Univ., Pocatello, ID (United States)
Three complimentary ion beam techniques will be combined in the analysis of oxide and nitride based materials: BN, SiN{sub x}, SiO{sub 2}, AlO{sub x}, and La{sub 0.85}Sr{sub 0.15}CoO{sub 3}. These materials can be synthesized over composition ranges which vary the physical and electrical properties, and therefore an accurate measure of the composition profiles is critical for controlling these properties. Elastic Recoil Detection (ERD) revealed the composition of light elements from H to O, and Rutherford Backscattering Spectrometry (RBS) gave the composition of heavier elements (e.g., Si, Al, and La). High Energy Backscattering Spectrometry (HEBS) complimented these techniques by utilizing enhanced cross-sections, greater than Rutherford, to increase the signal-to-noise ratio for analysis of mid-range elements O and N. ERD with 24 MeV Si ions gave profiles for H, B, and N in thin films, and 30 MeV Si worked best to profile both H and O in thicker SiO{sub 2} films (up to 1{mu}m). Although 2.8 MeV He RBS worked well for heavier elements, HEBS utilized He ions at 3.5 MeV for N analysis and 8.7 MeV for O analysis, because at these energies the cross sections are 2 and 22 times Rutherford, respectively. Also, the depth of analysis was greater with HEBS because of the increased incident energy.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 199718
- Report Number(s):
- CONF-941129--
- Country of Publication:
- United States
- Language:
- English
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