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Carbon contaminant in the ion processing of aluminum oxide film

Journal Article · · J. Vac. Sci. Technol., A; (United States)
DOI:https://doi.org/10.1116/1.576274· OSTI ID:6266999
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Ion processing can induce contamination on the bombarded surface. However, this process is essential for the microelectronics device fabrication. Auger electron spectroscopy has been used to study the simultaneous deposition of carbon impurity during ion bombardment of magnetron rf-sputtering deposited aluminum oxide film. Ion bombardment on aluminum oxide results in a preferential removal of surface oxygen and a formation of a metastable state of aluminum suboxide. Cosputtered implanted carbon contaminant appears to have formed a new state of stoichiometry on the surface of the ion bombarded aluminum oxide and existed as an aluminum carbide. This phase has formed due to the interaction of the implanted carbon and the aluminum suboxide. The Ar/sup +/ ion sputter etching rate is reduced for the carbon contaminated oxide. The electrical resistance of the aluminum oxide between two gold strips has been measured. It is found that the electrical resistance is also reduced due to the formation of the new stoichiometry on the surface.
Research Organization:
Storage Technology Corporation, Louisville, Colorado 80028
OSTI ID:
6266999
Journal Information:
J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:3; ISSN JVTAD
Country of Publication:
United States
Language:
English

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Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
ARGON IONS
AUGER ELECTRON SPECTROSCOPY
CARBON IONS
CHALCOGENIDES
CHARGED PARTICLES
COLLISIONS
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ENERGY SPECTRA
FILMS
IMPURITIES
ION COLLISIONS
ION IMPLANTATION
IONS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SPECTRA
SPECTROSCOPY
SPUTTERING
STOICHIOMETRY
THIN FILMS