Evaluation of the use of sputter profiling with XPS or AES for the study of surface carburization resulting from high energy (>20 keV) ion implantation

Technical Report · Sat Oct 29 04:00:00 EDT 1983

OSTI ID:5912765

Clayton, C R

Auger depth profiling was used previously with Xe ion etching to determine the extent of carburization resulting from ion implantation. In this report, the possibility of surface carburization resulting from the low-energy ion bombardment associated with sputter profiling was investigated. When a sample is analyzed by AES or XPS, a surface-contaminant layer of carbonaceous material is always observed. The source of the contamination may be external and/or vacuum-related. The following are likely sources: atmospheric, cleaning solvents, rotary pump oil during initial pump down, diffusion pump fluid (polyether), and out-gassing of anodes and filaments. The carbon contamination layer was examined as a source of carbide formation at the near surface region of the substrate of a high-purity Cr sample. The influence of the Xe ion acceleration potential, the amount of carbon contamination, and the thickness of the surface oxide layer on the amount of carbide formed was determined.

• Research Organization: State Univ. of New York, Stony Brook (USA)
• OSTI ID: 5912765
• Report Number(s): AD-A-150092/5/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360106* -- Metals & Alloys-- Radiation Effects
360200 -- Ceramics
Cermets
& Refractories
AUGER ELECTRON SPECTROSCOPY
CARBIDES
CARBON COMPOUNDS
CARBURIZATION
CHALCOGENIDES
CHROMIUM
ELECTRON SPECTROSCOPY
ELEMENTS
ETCHING
HARDENING
ION IMPLANTATION
LAYERS
METALS
OXIDES
OXYGEN COMPOUNDS
SPECTROSCOPY
SPUTTERING
SUBSTRATES
SURFACE FINISHING
SURFACE HARDENING
SURFACE TREATMENTS
SURFACES
TRANSITION ELEMENTS