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Ion induced chemical bonding of carbon with Ta as studied by Auger electron spectroscopy and slow electron energy loss spectroscopy

Journal Article · · Applied Physics Letters; (United States)
DOI:https://doi.org/10.1063/1.105746· OSTI ID:6185500
; ;  [1]
  1. National Physical Laboratory, K. S. Krishnan Road, New Delhi 110 012 (India)

The chemical bonding of contaminants like carbon and oxygen on the surface of Ta and Ta{sub 2}O{sub 5} films due to Ar{sup +} ion bombardment during sputter etching, has been studied using Auger electron spectroscopy and slow electron energy loss spectroscopy. Finger printing of C KLL peak shows that the energy separation between the major positive-going and negative-going excursions, which is 23 eV in the pure graphitic form, reduces to 6 eV indicating the carbide formation after ion bombardment. It is assumed that the chemical reaction is initiated by an increase in {pi} electrons in the graphite due to ion bombardment. The carbide formation is found to be much less effected in Ta{sub 2}O{sub 5} films which has been attributed to the absence of free {ital d} electrons of Ta in the oxide.

OSTI ID:
6185500
Journal Information:
Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:25; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English