Chemical plasma etching of Y-Ba-Cu-oxide thin films

Journal Article · Sun Dec 15 04:00:00 EST 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.349727· OSTI ID:6257766

Poor, M R; Fleddermann, C B ^[1]

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1. Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico (USA)

The use of chemical plasma etching for patterning thin films of superconducting Y-Ba-Cu-oxide thin films is reported. Etch rates as high as 10 {mu}m/min were measured, and were found to be highly dependent on substrate temperature and annealing of the film. Energy dispersive spectroscopy measurements showed significant variations in film stoichiometry as substrate temperatures increased, with copper being the most volatile element, followed by barium and yttrium. Although the etching is isotropic, this study indicates that chemical plasma etching can be a viable technology for high-{ital T}{sub {ital c}} superconducting thin-film patterning.

• OSTI ID: 6257766
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:12; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
ALKALINE EARTH METAL COMPOUNDS
ANNEALING
BARIUM COMPOUNDS
BARIUM OXIDES
CHALCOGENIDES
COPPER COMPOUNDS
COPPER OXIDES
ETCHING
FILMS
HEAT TREATMENTS
HIGH-TC SUPERCONDUCTORS
OXIDES
OXYGEN COMPOUNDS
PLASMA
SUPERCONDUCTING FILMS
SUPERCONDUCTORS
SURFACE FINISHING
TEMPERATURE DEPENDENCE
TRANSITION ELEMENT COMPOUNDS
VERY HIGH TEMPERATURE
YTTRIUM COMPOUNDS
YTTRIUM OXIDES