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Chemical etching of Y-Cu-Ba-O thin films

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.99695· OSTI ID:5418676
Thin films of Y-Ba-Cu-O have been deposited by rf sputtering using a stoichiometric target on alumina, zirconia, and Y/sub 2/O/sub 3/ coated silicon substrates. After a brief heat treatment in oxygen, a resistive transition was observed with an onset temperature from 89 to 94.6 K. Etching experiments of the as-deposited films have been made to determine the etching rates of the compound. It was found that reproducible results can be readily obtained using the following solutions: H/sub 3/PO/sub 4//H/sub 2/O, HNO/sub 3//H/sub 2/O, and HCl/H/sub 2/O. Using a positive photoresist technology, 3 ..mu..m lines have been successfully produced by etching in these solutions. The present patterning process was found to have no deleterious effect on the superconducting characteristics of the Y-Ba-Cu-O films.
Research Organization:
Electrical Engineering Department, McGill University, 3480 University Street, Montreal H3A 2A7, Canada
OSTI ID:
5418676
Journal Information:
Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:18; ISSN APPLA
Country of Publication:
United States
Language:
English