Investigation of the influence of electron irradiation on the characteristics of gallium arsenide Schottky diodes

Journal Article · Sun Mar 01 04:00:00 EST 1981 · Sov. Phys. - Semicond. (Engl. Transl.); (United States)

OSTI ID:6256443

Vyatkin, A P; Dubinin, A V; Maksimova, N K; Filonov, N G

The current-voltage characteristics of Pd--GaAs diodes subjected to bombardment with high-energy electrons were investigated in a wide temperature range (77--400 /sup 0/K). Electron irradiation reduced the anisotropy of the height of the rectifying barrier of the various crystallographic surfaces of gallium arsenide, indicating that the irradiation affected the surface states at the Pd--GaAs interface. Introduction of deep levels associated with radiation defects altered the mechanism of carrier flow. Resonant tunneling effects could occur in Schottky-barrier diodes made of a material with a low dopant concentration.

• Research Organization: V. D. Kuznetsov Siberian Physicotechnical Scientic-Research Institute at the State University, Tomsk
• OSTI ID: 6256443
• Journal Information: Sov. Phys. - Semicond. (Engl. Transl.); (United States), Journal Name: Sov. Phys. - Semicond. (Engl. Transl.); (United States) Vol. 15:3; ISSN SPSEA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANISOTROPY
ARSENIC COMPOUNDS
ARSENIDES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON COLLISIONS
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALS
PALLADIUM
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PLATINUM METALS
PNICTIDES
RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSITION ELEMENTS