High performance Schottky diodes based on indium-gallium-zinc-oxide
- School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)
- School of Physics, Shandong University, Jinan 250100 (China)
Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.
- OSTI ID:
- 22592924
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 34, Issue 4; Other Information: (c) 2016 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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