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Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se/sup -/2-/, n-GaAs/CH/sub 3/CH-ferrocene/sup +/0/, and n-GaAs/Au interfaces

Journal Article · · J. Phys. Chem.; (United States)
DOI:https://doi.org/10.1021/j100331a043· OSTI ID:6255134
Current-voltage and spectral response properties were determined for polycrystalline n-GaAs photoanodes in contact with aqueous KOH-Se/sup -2/-/ and nonaqueous CH/sub 3/CN-ferrocene/sup +/0/-LiClO/sub 4/ electrolytes. The n-GaAs/KOH-Se/sup -/2-/ system initially exhibited poor junction behavior, but chemisorption of Ru/sup III/, Rh/sup III/, Ir/sup III/, Co/sup III/, or Os/sup III/ ions onto the GaAs photoanode was found to yield improved I-V properties. The trend in I-V improvement correlated with improved electrocatalysis of Se/sup 2/minus// oxidation at p-GaAs, N/sup +/-GaAs, and In/sub 2/O/sub 3/ electrode surfaces. The n-GaAs/CH/sub 3/CH system displayed excellent junction behavior and did not respond to metal chemisorption treatments. These results are consistent with the metal-ion-induced improvements being predominantly due to electrocatalytic effects.
Research Organization:
Stanford Univ., CA (USA)
OSTI ID:
6255134
Journal Information:
J. Phys. Chem.; (United States), Journal Name: J. Phys. Chem.; (United States) Vol. 92:20; ISSN JPCHA
Country of Publication:
United States
Language:
English

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