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Chemical modification of n-GaAs photoanodes with group VIIIB metal ions: Stability in contact with 1. 0 M KOH(aq)-0. 10 M K[sub 2]Se(aq) solutions and I-V properties in contact with 1. 0 M KOH(aq)-0. 3 M K[sub 2]Te(aq) electrolytes

Journal Article · · Journal of Physical Chemistry; (United States)
DOI:https://doi.org/10.1021/j100177a092· OSTI ID:6923567
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  1. California Inst. of Tech., Pasadena (United States)
A quantitative study has been performed on the stability of GaAs surfaces to photoanodic corrosion in contact with the 1.0 M KOH(aq)-0.10 M K[sub 2]Se(aq)-0.01 M K[sub 2]Se[sub 2](aq) electrolyte. In this electrolyte, chemically etched n-type GaAs electrodes displayed significant photocorrosion in competition with faradaic charge transfer to Se[sup 2[minus]](aq). Chemisorption of group VIIIB metal ions, including complexes of Co(III), Os(III), and Ru(III), onto the etched GaAs surface yielded improved current-voltage (I-V) behavior of the GaAs photoanode and also resulted in a significant reduction in photocorrosion. This behavior implies that the chemisorbed metal ions act to increase the rate of hole transfer to the Se[sup 2[minus]] donor species, as opposed to the passivation of nonradiative surface recombination. Related experiments on n-GaAs photoanodes in contact with the 1.0 M KOH(aq)-0.3 M Te[sup 2[minus]](aq)-0.01 M Te[sub 2][sup 2[minus]](aq) electrolyte have also been performed. The I-V properties of n-GaAs, p-GaAs, and Sn-doped In[sub 2]O[sub 3] electrodes have been investigated in this electrolyte, and these measurements have been used to elucidate common mechanistic features of charge-transfer reactions for the Se[sup 2[minus]](aq) and Te[sup 2[minus]](aq) redox systems.
OSTI ID:
6923567
Journal Information:
Journal of Physical Chemistry; (United States), Journal Name: Journal of Physical Chemistry; (United States) Vol. 95:24; ISSN JPCHAX; ISSN 0022-3654
Country of Publication:
United States
Language:
English