Studies of the n-GaAs/KOH-Se sub 2 sup 2 minus -Se sup 2 minus semiconductor/liquid junction
Journal Article
·
· Journal of Physical Chemistry; (USA)
- California Institute of Technology, Pasadena (USA)
The current-voltage characteristics of the n-GaAs/KOH-Se{sub 2}{sup 2{minus}}-Se{sup 2{minus}} semiconductor/liquid junction have been determined for a variety of conditions, including changes in the majority carrier density, the minority carrier diffusion length, and the incident light intensity. These data provide an experimental test of previous digital simulation calculations and provide necessary data for use in further mechanistic studies of this system. Spectral response measurements have been performed to elucidate the anomalous increase in short circuit photocurrent density when the n-GaAs photoanodes, and we have observed solar simulated efficiencies in excess of 16% for Os{sup 3+}-treated n-GaAs photoanodes. Chemisorption of metal ions that yielded beneficial effects of n-GaAs photoanode performance also yielded increased charge-transfer rates at p-GaAs, n{sup +}-GaAs, and Sn-doped In{sub 2}O{sub 3} surfaces.
- OSTI ID:
- 5111346
- Journal Information:
- Journal of Physical Chemistry; (USA), Journal Name: Journal of Physical Chemistry; (USA) Vol. 93:8; ISSN 0022-3654; ISSN JPCHA
- Country of Publication:
- United States
- Language:
- English
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Chemical modification of n-GaAs photoanodes with group VIIIB metal ions: Stability in contact with 1. 0 M KOH(aq)-0. 10 M K[sub 2]Se(aq) solutions and I-V properties in contact with 1. 0 M KOH(aq)-0. 3 M K[sub 2]Te(aq) electrolytes
Journal Article
·
Thu Jul 15 00:00:00 EDT 1993
· Journal of Physical Chemistry; (United States)
·
OSTI ID:6028338
Studies of polycrystalline n-GaAs junctions: effects of metal ion chemisorption on the photoelectrochemical properties of n-GaAs/KOH-Se/sup -/2-/, n-GaAs/CH/sub 3/CH-ferrocene/sup +/0/, and n-GaAs/Au interfaces
Journal Article
·
Thu Oct 06 00:00:00 EDT 1988
· J. Phys. Chem.; (United States)
·
OSTI ID:6255134
Chemical modification of n-GaAs photoanodes with group VIIIB metal ions: Stability in contact with 1. 0 M KOH(aq)-0. 10 M K[sub 2]Se(aq) solutions and I-V properties in contact with 1. 0 M KOH(aq)-0. 3 M K[sub 2]Te(aq) electrolytes
Journal Article
·
Wed Nov 27 23:00:00 EST 1991
· Journal of Physical Chemistry; (United States)
·
OSTI ID:6923567
Related Subjects
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
400400* -- Electrochemistry
ALKALI METAL COMPOUNDS
ANIONS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHARGE CARRIERS
CHARGED PARTICLES
CURRENTS
DIFFUSION
EFFICIENCY
ELECTRIC CURRENTS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYDROGEN COMPOUNDS
HYDROXIDES
INTERFACES
IONS
LIGHT SOURCES
LIQUIDS
MATERIALS
OSMIUM COMPOUNDS
OXYGEN COMPOUNDS
PERFORMANCE
PHOTOCURRENTS
PNICTIDES
POTASSIUM COMPOUNDS
POTASSIUM HYDROXIDES
RADIATION SOURCES
REFRACTORY METAL COMPOUNDS
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
SOLIDS
TRANSITION ELEMENT COMPOUNDS
VOLTAMETRY
400400* -- Electrochemistry
ALKALI METAL COMPOUNDS
ANIONS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CHARGE CARRIERS
CHARGED PARTICLES
CURRENTS
DIFFUSION
EFFICIENCY
ELECTRIC CURRENTS
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HYDROGEN COMPOUNDS
HYDROXIDES
INTERFACES
IONS
LIGHT SOURCES
LIQUIDS
MATERIALS
OSMIUM COMPOUNDS
OXYGEN COMPOUNDS
PERFORMANCE
PHOTOCURRENTS
PNICTIDES
POTASSIUM COMPOUNDS
POTASSIUM HYDROXIDES
RADIATION SOURCES
REFRACTORY METAL COMPOUNDS
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
SOLIDS
TRANSITION ELEMENT COMPOUNDS
VOLTAMETRY