Application of sputtered SiO/sub 2/ insulator to Nb/AlO/sub x//Nb Josephson junctions

Journal Article · Thu Oct 15 00:00:00 EDT 1987 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.339308· OSTI ID:6249632

Hoko, H; Imamura, T; Ohara, S; Hasuo, S

Sputtered SiO/sub 2/ films were applied as an insulator in all-refractory Josephson circuits. The sputtered SiO/sub 2/ exhibited excellent insulating characteristics with respect to infrared absorption, breakdown voltage, and step coverage. The sputtered SiO/sub 2/ was employed in the actual fabrication of Nb/AlO/sub x//Nb Josephson circuits, and no deterioration in the junction quality or the critical current density was observed. An 8Kbit memory cell array was fabricated, and perfect chips with no failures were obtained. In these chips, the integrity of the insulation and continuity was verified for four-level Nb electrodes. This indicates the availability of sputtered SiO/sub 2/ in all-refractory Josephson integrated circuits.

• Research Organization: Fujitsu Limited, 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan
• OSTI ID: 6249632
• Journal Information: J. Appl. Phys.; (United States), Vol. 62:8
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRONIC CIRCUITS
JOSEPHSON JUNCTIONS
CRITICAL CURRENT
CURRENT DENSITY
FABRICATION
ALUMINIUM OXIDES
BREAKDOWN
EXPERIMENTAL DATA
NIOBIUM
PERFORMANCE
SILICA
SPUTTERING
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELEMENTS
INFORMATION
JUNCTIONS
METALS
MINERALS
NUMERICAL DATA
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
SILICON COMPOUNDS
SILICON OXIDES
SUPERCONDUCTING JUNCTIONS
TRANSITION ELEMENTS
420201* - Engineering- Cryogenic Equipment & Devices