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Title: Scintillation performance of large Ce-doped Gd{sub 2}SiO{sub 5} (GSO) single crystal

Journal Article · · IEEE Transactions on Nuclear Science
DOI:https://doi.org/10.1109/23.682439· OSTI ID:624178
; ; ;  [1];  [2]; ;  [3];  [4]
  1. Hitachi Chemical Co., Ltd., Tsukuba, Ibaraki (Japan)
  2. High Energy Accelerator Research Organization, Tsukuba, Ibaraki (Japan)
  3. Univ. of Tsukuba, Ibaraki (Japan)
  4. Shonan Inst. of Tech., Fujisawa, Kanagawa (Japan)

Single crystal Ce-doped Gd{sub 2}SiO{sub 5} (GSO) has a good balance of scintillation properties such as high density, intense light output, and short decay time, and also has an excellent temperature response and excellent radiation hardness. The authors studied causes for cracks in single-crystal GSO which have been a major problem in GSO growth, and tried to optimize the growth conditions by using a two-zone furnace which reduced thermal gradient. They were thus able to grow a crack-free single-crystal of GSO that was 80 mm in diameter and 280 mm long. Specimens with 20 x 20 x 200 mm{sup 3} sampled from the large GSO boules with 0.5 and 1.5 mol% Ce have been evaluated for high energy physics application.

OSTI ID:
624178
Report Number(s):
CONF-971147-; ISSN 0018-9499; TRN: 98:006431
Journal Information:
IEEE Transactions on Nuclear Science, Vol. 45, Issue 3Pt1; Conference: Institute of Electrical and Electronic Engineers (IEEE) nuclear science symposium and medical imaging conference, Albuquerque, NM (United States), 11-13 Nov 1997; Other Information: PBD: Jun 1998
Country of Publication:
United States
Language:
English

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