Surface polishing of GSO scintillator using chemical process

Journal Article · Mon Jun 01 04:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.682440· OSTI ID:624179

Kurashige, K; Kurata, Y; Ishibashi, H; Susa, K ^[1]

---

1. Hitachi Chemical Co., Ltd., Tsukuba, Ibaraki (Japan). Tsukuba Research Lab.

A Ce doped Gd{sub 2}SiO{sub 5} (GSO) single crystal is an excellent scintillator featuring a large light output, a short decay constant and a high absorption coefficient. It was shown in previous studies that the surfaces of the scintillator should be polished to get scintillation light output efficiently especially for long and narrow scintillators. Therefore, the authors newly developed a chemical process to polish the GSO crystal. The surface of the GSO crystal was found to become smooth when it was etched using anhydrous orthophosphoric acid at 150--300 C. The process was also proved to be applicable to large size crystal such as 20 x 20 x 200 mm{sup 3} preventing thermal shock crack. An improvement in the scintillator efficiency was confirmed using the chemical polishing process.

• OSTI ID: 624179
• Report Number(s): CONF-971147--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
CERIUM
CHEMICAL POLISHING
DOPED MATERIALS
GADOLINIUM COMPOUNDS
INORGANIC PHOSPHORS
PERFORMANCE
SILICATES
SOLID SCINTILLATION DETECTORS