Investigation of efficient termination structure for improved breakdown properties of semiconductor radiation detectors

Journal Article · Mon Jun 01 00:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.682412· OSTI ID:624153

Krizaj, D; Resnik, D; Vrtacnik, D; Amon, S ^[1]; Cindro, V ^[2]

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1. Univ. of Ljubljana (Slovenia). Faculty of Electrical Engineering
2. Jozef Stefan Inst., Ljubljana (Slovenia)

Efficiency of a new junction termination structure for improvement of breakdown properties of semiconductor radiation detectors is investigated. The structure consists of a diffused resistor winding around the active junction in a spiral fashion. The current flow through the spiral enables controlled potential distribution along the spiral turns and thus controlled depletion spreading from the main junction, efficiently preventing premature avalanche breakdown. Both multiple guard-ring structures and spiral junction termination structures have shown good breakdown properties typically three to five times higher than breakdown voltages of diodes without junction termination. The breakdown voltages of spiral junction termination structures are only weakly influenced by changes in substrate doping concentration caused by neutron irradiation. They can thus be considered for termination of future semiconductor radiation detectors.

• OSTI ID: 624153
• Report Number(s): CONF-971147--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
DEPLETION LAYER
DESIGN
ELECTRIC POTENTIAL
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS