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Embedded conductors by electrochemical planarization

Conference ·
OSTI ID:6237668

An electrochemical process is described for planarization of metal interconnect layers on integrated circuits and multichip modules. Electroplating is used to deposit metal over a patterned SiO/sub 2/ dielectric, followed by electropolishing to remove excess metal. Electropolishing simultaneously smooths and further flattens the surface. The process yields a planar surface with conductors embedded in the etched regions of the dielectric. It is shown that pulsed plating is superior to galvanostatic plating in this application. 12 refs., 6 figs.

Research Organization:
Lawrence Livermore National Lab., CA (USA)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
6237668
Report Number(s):
UCRL-100692; CONF-890518-2; ON: DE89011632
Country of Publication:
United States
Language:
English