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Evidence of silicon nitride as a hydrogen getter during high-temperature heating via boron hydrogenation experiments

Journal Article · · J. Electrochem. Soc.; (United States)
DOI:https://doi.org/10.1149/1.2095516· OSTI ID:6237613

Boron acceptor deactivation in crystalline silicon by hydrogen under avalanche electron injection and Fowler-Nordheim tunneling electron injection stress were measured on four types of metal/nitride/oxide/silicon capacitors of 300A dielectric thickness with 99 or 199A nitride layers, with or without a 15 min heating at 960/sup 0/C. For capacitors without 960/sup 0/C heating, a large amount of boron acceptors were deactivated by hydrogen during injection stress, while negligible hydrogenation was observed for capacitors heated at 960/sup 0/C. These suggest that the hydrogen in the oxide layer which contributed to hydrogenation in the unheated capacitors was gettered by silicon nitride during the 15 min heating at 960/sup 0/C.

Research Organization:
Solid State Electronics Lab., Dept. of Electrical and Computer Engineering, Univ. of Illinois, Urbana-Champaign, IL (US); Dept. of Electrical Engineering, Univ. of Florida, gainesville, FL (US)
OSTI ID:
6237613
Journal Information:
J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 135:12; ISSN JESOA
Country of Publication:
United States
Language:
English