Evidence of silicon nitride as a hydrogen getter during high-temperature heating via boron hydrogenation experiments
Boron acceptor deactivation in crystalline silicon by hydrogen under avalanche electron injection and Fowler-Nordheim tunneling electron injection stress were measured on four types of metal/nitride/oxide/silicon capacitors of 300A dielectric thickness with 99 or 199A nitride layers, with or without a 15 min heating at 960/sup 0/C. For capacitors without 960/sup 0/C heating, a large amount of boron acceptors were deactivated by hydrogen during injection stress, while negligible hydrogenation was observed for capacitors heated at 960/sup 0/C. These suggest that the hydrogen in the oxide layer which contributed to hydrogenation in the unheated capacitors was gettered by silicon nitride during the 15 min heating at 960/sup 0/C.
- Research Organization:
- Solid State Electronics Lab., Dept. of Electrical and Computer Engineering, Univ. of Illinois, Urbana-Champaign, IL (US); Dept. of Electrical Engineering, Univ. of Florida, gainesville, FL (US)
- OSTI ID:
- 6237613
- Journal Information:
- J. Electrochem. Soc.; (United States), Journal Name: J. Electrochem. Soc.; (United States) Vol. 135:12; ISSN JESOA
- Country of Publication:
- United States
- Language:
- English
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250400 -- Energy Storage-- Capacitor Banks
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360603 -- Materials-- Properties
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAM INJECTION
BORON
CAPACITORS
DIELECTRIC PROPERTIES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON BEAM INJECTION
ELEMENTS
EMBRITTLEMENT
EQUIPMENT
GETTERING
GETTERS
HEAT TREATMENTS
HIGH TEMPERATURE
HYDROGEN EMBRITTLEMENT
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
TUNNELING