Dopant deactivation and annealing characteristics of metal-oxide-semiconductor structures on germanium/boron-doped silicon after gamma irradiation or Fowler--Nordheim charge injection

Journal Article · Thu Aug 01 00:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.349567· OSTI ID:5487050

Hashemipour, O; Ang, S S; Brown, W D; Yeargan, J R ^[1]; West, L ^[2]

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1. Department of Electrical Engineering, 3217 Bell Engineering Center, University of Arkansas, Fayetteville, Arkansas 72701 (USA)
2. Department of Mechanical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (USA)

Dopant deactivation and thermal annealing characteristics of metal-oxide-semiconductor capacitors fabricated on Ge/B-doped silicon after gamma irradiation or Fowler--Nordheim injection were investigated for the first time. A decrease of about 30% in active acceptor concentration was observed immediately after gamma irradiation or Fowler--Nordheim injection. Further deactivation of boron ({similar to}20%) occurred with annealing for temperatures of 80 {degree}C and higher. Hydrogen for the deactivation, which occurred during annealing, is thought to come from dissociation of weakly bonded Ge---H formed during the gamma irradiation or Fowler--Nordheim injection. Capacitors fabricated on conventional boron-doped substrates do not exhibit acceptor deactivation as a result of annealing following irradiation or injection. For annealing temperatures of 110 {degree}C and higher, the boron is first deactivated by the process noted above, and then is apparently reactivated by the dissociation of B---H bonds with hydrogen evolution from the structure.

• OSTI ID: 5487050
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 70:3; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
BORON
CAPACITORS
DOPED MATERIALS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FABRICATION
FOWLER-NORDHEIM THEORY
GAMMA RADIATION
GERMANIUM
HEAT TREATMENTS
IONIZING RADIATIONS
MATERIALS
METALS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMIMETALS
SILICON