Electron spin resonance study of the dangling bond in amorphous Si and porous Si

Journal Article · Mon Sep 20 04:00:00 EDT 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.110727· OSTI ID:6237272

McMahon, T J; Xiao, Y ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

We compare the electron spin resonance (ESR) signal of the dangling bond in porous silicon (PS) layers, produced by electrochemical etching, to the ESR signal from hydrogenated amorphous Si([ital a]-Si:H) films. The anisotropy of the ESR signal from PS showed [ital g] values varying as for the [ital P][sub [ital b]] Si/SiO[sub 2] interface dangling bond. The [ital g] value varies from [ital g][sub [parallel]]=2.0020 to [ital g][sub [perpendicular]]=2.0080 with an inhomogeneously broadened line width increasing from 1.8 to 3.8 G. An ESR powder line, with superhyperfine and strain broadening intrinsic to PS, has more anisotropy in [ital g][sub [parallel]][minus][ital g][sub [perpendicular]] and less inhomogeneous broadening than does the dangling bond line in [ital a]-Si:H. No evidence was seen for light-induced metastability on a H-passivated PS film.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6237272
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 63:12; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
AMORPHOUS STATE
ANISOTROPY
CHEMICAL REACTIONS
COMPARATIVE EVALUATIONS
DEFECTS
ELECTRON SPIN RESONANCE
ELEMENTS
EVALUATION
G VALUE
HYDROGENATION
LINE BROADENING
MAGNETIC RESONANCE
MATERIALS
POROUS MATERIALS
RESONANCE
SEMIMETALS
SILICON