Source of sup 17 O hyperfine broadening of the P sub b resonance associated with the (111) Si-SiO sub 2 interface

Journal Article · Sat Dec 15 04:00:00 EST 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.42.11352· OSTI ID:5875411

Brower, K L ^[1]

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1. Sandia National Laboratory, Albuquerque, NM (USA)

The {ital P}{sub {ital b}} center is primarily a silicon dangling-bond type of defect at the (111) Si-SiO{sub 2} interface that is observable with electron paramagnetic resonance (EPR). Dry oxidation at 750 {degree}C of (111) silicon with O{sub 2} enriched with {sup 17}O ({ital I}=5/2) to 51.26% is observed by EPR to significantly increase the linewidth of the {ital P}{sub {ital b}} resonance at {ital g}=2.0016. In this paper, we show that the source of this line broadening is due to {sup 17}O superhyperfine interactions with {sup 17}O in the oxide. Furthermore, our EPR measurements indicate that the microscopic concentration of {sup 17}O absorbed and diffused into the silicon adjacent to the interface is insufficient to make a detectable contribution to the {sup 17}O superhyperfine broadening.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5875411
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 42:17; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CHALCOGENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEFECTS
ELECTRON SPIN RESONANCE
ELEMENTS
EVEN-ODD NUCLEI
HYPERFINE STRUCTURE
INTERFACES
ISOTOPES
LIGHT NUCLEI
LINE WIDTHS
MAGNETIC RESONANCE
NUCLEI
OXIDES
OXYGEN 17
OXYGEN COMPOUNDS
OXYGEN ISOTOPES
POINT DEFECTS
RESONANCE
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
STABLE ISOTOPES
VACANCIES