Grain boundary diffusion of phosphorous in silicon
Grain boundary diffusion of phosphorous in Wacker SILSO polycrystalline Si has been studied at temperatures between 750 and 1050 /sup 0/C using a groove and stain technique. It is shown that the Fisher model of grain boundary diffusion describes the data accurately assuming an infinite source (Whipple solution) aided by Le Claire's graphical solution of the model. The bulk D/sub B/ and grain boundary D' diffusion coefficients were best described by D/sub B/ = 1.6 x 10/sup 15/ cm/sup 2//s exp(-2.09eV/kT) and D' = 4.0 x 10/sup -5/ cm/sup 2//s exp(-1.4eV/kT), respectively, where a boundary width of 5 A was assumed for D'. Proper procedures for reducing the data are illustrated including an important correction to penetration depth made necessary because of the inability of optical microscopy to detect very narrow diffusion regions near a grain boundary.
- Research Organization:
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
- OSTI ID:
- 6237226
- Journal Information:
- J. Vac. Sci. Technol., A; (United States), Journal Name: J. Vac. Sci. Technol., A; (United States) Vol. 7:3; ISSN JVTAD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ATOM TRANSPORT
CRYSTAL STRUCTURE
CRYSTALS
DATA
DIFFUSION
ELEMENTS
EXPERIMENTAL DATA
FILMS
GRAIN BOUNDARIES
GRANULAR MATERIALS
INFORMATION
LOW PRESSURE
MASS SPECTROSCOPY
MATERIALS
MICROSTRUCTURE
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
NUMERICAL DATA
PHOSPHORUS
POLYCRYSTALS
RADIATION TRANSPORT
SEMIMETALS
SILICON
SPECTROSCOPY
VERY HIGH TEMPERATURE