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U.S. Department of Energy
Office of Scientific and Technical Information

Thin-film polycrystalline silicon solar cells. Technical progress quarterly report No. 1, September 25-December 24, 1979

Technical Report ·
OSTI ID:5356619
The laser scanner has been improved in resolution and convenience of operation. The analysis of grain-boundary laser-photoresponse line shape at lambda = 1.5 ..mu..m yields a value for the grain boundary surface recombination velocity, i.e., s = 1.0 x 10/sup 4/ cm/s. New experiments are underway in: (1) deep-level spectroscopy, where a sample is being fabricated with a grain boundary level spectroscopy, where a sample is being fabricated with a grain boundary parallel to the surface; (2) liquid-crystal technique for measuring grain boundaries, by improving the electrical contacts to the sample; and (3) electron channeling patterns, by examining grains which have been previously laser-scanned. Hydrogenation experiments on phosphorus-diffused Wacker Silso solar cells yield negative results even when grain-boundary activity is monitored by the sensitive laser scanning method. Experiments are planned on bare silicon by a laser-scan-photoconductivity technique. Phosphorus diffusion down grain boundaries has been observed by bevel and stain experiments on a variety of diffused and implanted junctions in the temperature range of 750/sup 0/ to 950/sup 0/C. Diffusion spike lengths vary from 1/3 to 1 1/2 times the junction depth, and between 25 to 75% of the grain boundaries show these spikes. Laser scanning experiments show that grain boundaries with diffusion spikes are not electrically active. A new series of bicyrstals was begun with a <110> growth direction. So far, a crystal with a 30/sup 0/ misorientation has been successfully grown.
Research Organization:
RCA Labs., Princeton, NJ (USA)
DOE Contract Number:
EG-77-C-01-4042
OSTI ID:
5356619
Report Number(s):
SERI/PR-0-8276-1
Country of Publication:
United States
Language:
English