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U.S. Department of Energy
Office of Scientific and Technical Information

Thin-film polycrystalline silicon solar cells. Technical progress quarterly report No. 2

Technical Report ·
OSTI ID:5288200
A continuing study of the characterization of grain boundaries in polycrystalline silicon is reported. The solar cells fabricated in this quarter, which include a complete set of bicrystals and cells made on two different types of potentially low-cost substrates, are listed. Some detailed QE measurements on a Wacker Silso cell are described and the difference between bulk and average diffusion length is explained. It is shown how the average QE curve can be used to calculate the AM-1 short-circuit current with excellent accuracy. The laser scanner has been improved further and excellent scans are obtained at wavelengths of 633 nm and 1150 nm. These are discussed along with a new photoconductivity-laser-scan technique for observing grain boundaries in bare silicon, i.e., with no diffused junction. Recent developments in other grain boundary characterization techniques are described. These include the liquid-crystal technique for observing grain boundaries, the use of a bicrystal with grain boundary parallel to the sample surface for DLTS measurements, and the measurement of grain crystallographic orientation by electron-channeling patterns in a previously laser-scanned sample of Wacker Silso silicon.
Research Organization:
RCA Labs., Princeton, NJ (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5288200
Report Number(s):
SERI/PR-0-8276-2
Country of Publication:
United States
Language:
English