Influence of illumination on the grain boundary recombination velocity in silicon
The variation with illumination of the grain boundary (GB) barrier height E/sub B/ and of the effective recombination velocity S/sub eff/ is calculated by means of a self-consistent procedure which takes into account the bending of the minority carrier quasi-Fermi level in the GB space-charge region and in the GB quasi-neutral region. The GB interface states have been assumed to be uniformly distributed in a half-filled band whose width and position in the band gap can vary. S/sub eff/ is nearly proportional to exp(E/sub B//kT), only when E/sub B/ is sufficiently low. For high E/sub B/, S/sub eff/ is limited by the thermal velocity. The influence of the density of interface states and the grain doping concentration has been studied. The experimental results obtained with Silso--Wacker polycrystalline silicon show that the grain boundaries present different behaviors.
- Research Organization:
- Laboratoire des Materiaux et Composants Semi-conducteurs, Ecole Nationale Superieure de Physique de Marseille, F.13397 Marseille Cedex 13, France
- OSTI ID:
- 5229627
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 55:4; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BENDING
CHARGE CARRIERS
CRYSTAL STRUCTURE
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
ENERGY GAP
ENERGY LEVELS
ENERGY-LEVEL DENSITY
ENERGY-LEVEL TRANSITIONS
EQUIPMENT
EXCITATION
FERMI LEVEL
GRAIN BOUNDARIES
INTERFACES
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POLYCRYSTALS
RECOMBINATION
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
VELOCITY