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High grain boundary recombination velocity in polycrystalline metal halide perovskites

Journal Article · · Science Advances

Understanding carrier recombination processes in metal halide perovskites is fundamentally important to further improving the efficiency of perovskite solar cells, yet the accurate recombination velocity at grain boundaries (GBs) has not been determined. Here, we report the determination of carrier recombination velocities at GBs (SGB) of polycrystalline perovskites by mapping the transient photoluminescence pattern change induced by the nonradiative recombination of carriers at GBs. Charge recombination at GBs is revealed to be even stronger than at surfaces of unpassivated films, with average SGB reaching 2200 to 3300 cm/s. Regular surface treatments do not passivate GBs because of the absence of contact at GBs. We find a surface treatment using tributyl(methyl)phosphonium dimethyl phosphate that can penetrate into GBs by partially dissolving GBs and converting it into one-dimensional perovskites. It reduces the average SGB by four times, with the lowest SGB of 410 cm/s, which is comparable to surface recombination velocities after passivation.

Research Organization:
Univ. of North Carolina, Chapel Hill, NC (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Energy Efficiency Office; USDOE Office of Science (SC), Basic Energy Sciences (BES); Center for Hybrid Organic Inorganic Semiconductors for Energy (CHOISE)
Grant/Contract Number:
EE0009520
OSTI ID:
1883600
Journal Information:
Science Advances, Journal Name: Science Advances Journal Issue: 36 Vol. 8; ISSN 2375-2548
Publisher:
AAASCopyright Statement
Country of Publication:
United States
Language:
English

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