Lateral superradiance suppressing diode laser bar

Patent · Tue Feb 07 04:00:00 EST 1989

OSTI ID:6235100

Scifres, D R; Kung, H; Cross, P; Burnham, R D; Streifer, W

A diode laser bar is described comprising semiconductor layers disposed one atop another on a semiconductor substrate, with the layers having a length defining a longitudinal direction, a width defining an edge-to-edge lateral direction and a depth defining a transverse direction, the directions being mutually perpendicular, at least one of the layers forming an active lasing region, the layers being doped to provide a p-n junction adjacent to the active region, electrode means for supplying current to the active region, feedback means for providing an optical cavity in the longitudinal direction of the active region, and active region interrupting means at space apart intervals in the active region for suppressing amplified spontaneous emission in the lateral direction, wherein the lasing region is at least 50 percent of the total active region interrupting means plus the lasing region.

• Assignee: Spectra Diode Laboratories, Inc., San Jose, CA
• Patent Number(s): US 4803691
• OSTI ID: 6235100
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
DESIGN
ELECTRODES
EMISSION
FEEDBACK
LASER CAVITIES
LASERS
LAYERS
OPTICAL SYSTEMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SUBSTRATES