GaN Device Processing

Conference · Wed Dec 31 23:00:00 EST 1997

OSTI ID:622943

Pearton, S J ^[1]; Ren, F ^[2]; Zolper, J C ^[3]; Shul, R J ^[4]

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1. University of Florida, Gainesville, FL (United States)
2. Bell Laboratories, Lucent Technologies, Murray Hill, NJ (United States)
3. Office of Naval Research, Arlington, VA (United States)
4. Sandia National Labs., Albuquerque, NM (United States)

Recent progress in the development of dry and wet etching techniques, implant doping and isolation, thermal processing, gate insulator technology and high reliability contacts is reviewed. Etch selectivities up to 10 for InN over AlN are possible in Inductively Coupled Plasmas using a Cl2/Ar chemistry, but in general selectivities for each binary nitride relative to each other are low ({lt} OR = 2) BECAUSE OF THE HIGH ION ENERGIES NEEDED TO INITIATE ETCHING. IMPROVED N-TYPE OHMIC CONTACT RESISTANCES ARE OBTAINED BY SELECTIVE AREA SI+ IMPLANTATION FOLLOWED BY VERY HIGH TEMPERATURE ({gt}1300 deg C) anneals in which the thermal budget is minimized and AlN encapsulation prevents GaN surface decomposition. Implant isolation is effective in GaN, AlGaN and AlInN, but marginal in InGaN. Candidate gate insulators for GaN include AlN, AlON and Ga(Gd)O(x), but interface state densities are still to high to realize state-of-the-art MIS devices.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE Assistant Secretary for Management and Administration, Washington, DC (United States); USDOE Office of Financial Management and Controller, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 622943
• Report Number(s): SAND--98-0132C; CONF-971201--; ON: DE98002578
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ALUMINIUM
ALUMINIUM NITRIDES
ANNEALING
ARGON
CHLORIDES
CRYSTAL DOPING
DECOMPOSITION
DENSITY
ELECTRIC CONTACTS
ELECTRICAL INSULATION
ENCAPSULATION
ETCHING
FABRICATION
GADOLINIUM
GADOLINIUM OXIDES
GALLIUM NITRIDES
GALLIUM OXIDES
GATE INSULATOR TECHNOLOGY
GATING CIRCUITS
INDIUM
INDIUM NITRIDES
INDUCTIVELY COUPLED PLASMAS
INTERFACES
ION IMPLANTATION
IONS
MIS(METAL INSULATOR SEMICONDUCTOR)
MOISTURE
N-TYPE CONDUCTORS
OXIDES
SURFACES
TEMPERATURE RANGE 0400-1000 K
THERMODYNAMIC PROPERTIES