Ion implantation
Book
·
OSTI ID:6228490
Stressing practical problems rather than theoretical aspects, this up-to-date guide provides the latest data on applications of ion implantation. The focus is on the doping of semiconductors through ion implantation, its main use. The book also treats theoretical foundations, problems occurring in the use of implantation, diffusion effects, the most common measurement methods for examining implanted layers, and requirements for accelerator equipment. It covers such topics as defects, thermal annealing, laser annealing, and apparatus. SI units derived from the ion implantation system itself are used.
- OSTI ID:
- 6228490
- Country of Publication:
- United States
- Language:
- English
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