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Ion implantation and beam processing

Book ·
OSTI ID:6877892
;
This book presents papers on the ion implantation of semiconductor materials. Topics considered include beam processing, amorphization and crystallization, the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets, thermal spike concepts, ion-bombardment-induced composition changes in alloys and compounds, ion beam and laser mixing, high-dose implantation, silicon technology, gallium arsenide technology, and contacts and interconnections in semiconductors.
OSTI ID:
6877892
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ABSTRACTS
ALLOYS
AMORPHOUS STATE
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
BOLTZMANN EQUATION
CRYSTALLIZATION
DEPOSITION
DIFFERENTIAL EQUATIONS
DOCUMENT TYPES
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELEMENTS
ENERGY BEAM DEPOSITION
EQUATIONS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION BEAMS
ION IMPLANTATION
LASERS
LEADING ABSTRACT
MATERIALS
PARTIAL DIFFERENTIAL EQUATIONS
PHASE TRANSFORMATIONS
PNICTIDES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SURFACE COATING
THERMAL SPIKES