Recovery kinetics of phosphorus ion-implanted a-Si:H

Book · Tue Dec 31 04:00:00 EST 1996

OSTI ID:527702

Nakata, J ^[1]; Wagner, S; Gleskova, H ^[2]; Stolk, P A ^[3]; Poate, J M ^[4]

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1. Kinki Univ., Higashiosaka, Osaka (Japan). Dept. of Electrical Engineering
2. Princeton Univ., NJ (United States). Dept. of Electrical Engineering
3. Philips Research Lab., Eindhoven (Netherlands)
4. Lucent Technologies Bell Labs., Murray Hill, NJ (United States)

Hydrogenated amorphous silicon was implanted with phosphorus ions to a uniform concentration of 3 {times} 10{sup 20} cm{sup {minus}3} and defect saturation. The implants were annealed isochronally up to 400 C in the dark or under additional illumination. This illumination had no effect on recovery. The Urbach energy remains higher than that of silicon-implants. The midgap defect density anneals to {approximately}10{sup 18} cm{sup {minus}3}, typical of gas-phase doped samples. The dark conductivity remains lower and its thermal activation energy higher than in gas-phase doped samples. The authors surmise that the Si-Si network absorbs some of the donor electron-induced defect density by forming strained Si-Si bonds. These strained bonds widen the band tails, and thus reduce the effective electron mobility and pin the Fermi level.

• Sponsoring Organization: Electric Power Research Inst., Palo Alto, CA (United States)
• OSTI ID: 527702
• Report Number(s): CONF-960401--; ISBN 1-55899-323-1
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
ANNEALING
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
ILLUMINANCE
ION IMPLANTATION
MICROSTRUCTURE
PHOSPHORUS
POINT DEFECTS
SILICON